Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
VBsemiof2309-VBis aSOT23-3encapsulatedP-ChannelchannelMOSFET, - **Voltage specification (VDS):** -30V- **Current specification (ID):** -5.6A - **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V - **threshold voltage (vth):** -1V
Domain and module applications：
**Main application areas:** 1.
**Power switch module: **Due to its ability to withstand relatively high currents and voltages, it is suitable for power switching modules.
2.
**Battery protection circuit: **in needP-Channel MOSFETIn battery protection applications, such as mobile devices, laptops, etc.
3.
**Power switch module: **Can be used in various power switching modules, such as power inverters and switching power supplies.
Please note that before use, please review the relevant data sheet and specifications in detail to ensure correct application and performance.
Actual applications need to be adjusted according to specific design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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