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RU30P4B-VB Product details

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Product introduction：

Product Introduction: RU30P4B-VB is a P-Channel MOSFET produced by VBsemi Company. The device's low voltage, high current, and low on-resistance make it suitable for a variety of power management and power control applications.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -30V 20（±V） -1.7V -5.6A 54(mΩ) 46(mΩ)
Detailed parameter description: -Operating Voltage(VDS): -30V-Maximum leakage current (ID): -5.6A-On-resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V -threshold voltage (vth): -1V-Package: SOT23-3

Domain and module applications：

Examples of application areas and modules: 1.
Power management module: RU30P4B-VBCan be used to design low voltage, high efficiency DC-DCConverters for use in battery-powered systems, mobile devices, and embedded systems.
2.
Power Switch Module: Due to low on-resistance and high current capability, RU30P4B-VBSuitable for designing high-efficiency power switching circuits for power adapters, leddrive and DCMotor controller and other applications.
3.
Current control module: RU30P4B-VBIt can be used to design current control circuits and be used in fields such as power tools, industrial automation and vehicle-mounted electronic systems to achieve precise control and management of current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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