Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
30V |
20（±V） |
1.7V |
6.5A |
|
33(mΩ) |
30(mΩ) |
|
parameter: -Channel type:Nchannel -Rated voltage: 30V -Rated current: 6.
5A -Turn-on resistance (RDS(ON)): 30mΩ @ 10V, 33mΩ @ 4.
5V -Gate-Source threshold voltage range (vth): 1.
2V - 2.
2V -Gate drive voltage range: ±20V -Package type:SOT23-3
Domain and module applications：
The following are some possible application areas and modules where thisMOSFETMay be widely used: 1. **switch**:This oneMOSFETCan be used in a variety of power switching applications such as switching power supplies and voltage regulators. It can effectively control current flow, achieve energy conversion and voltage regulation. 2. **LEDdrive**:existledIn lighting applications,ZXMN3F30FHTA-VBCan be used asledpart of the driver circuit to achieve efficientledcontrol and brightness adjustment. 3. **mobile device**: this kindMOSFETCan be used in battery management and power switching circuits in mobile devices such as smartphones and tablets to extend battery life and improve device efficiency. 4. **battery protection**: In the battery management system, thisMOSFETCan be used in battery protection circuits to prevent over-discharge and over-charge, protecting battery performance and life. 5. **Wireless communication equipment**:ZXMN3F30FHTA-VBIt can also be used in power amplifiers and radio frequency switches in wireless communication equipment to control signal transmission and data processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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