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UT2306G-AE3-R-VB Product details
Back to previous pageProduct introduction：
- **Application Profile:** - **SOT23-3 Package:** Small, suitable for electronic applications in tight spaces.
- **N—Channel design:** Suitable for circuits requiring N-type field effect transistors.
- **Medium voltage, high current:** Suitable for power management applications requiring larger current under medium voltage conditions.
- **Low turn-on resistance:** Provides lower on-resistance, helping to improve circuit performance.
This VBsemi UT2306G-AE3-R-VB field effect transistor is suitable for a variety of power management and power control applications, especially scenarios with high current requirements under medium voltage conditions.
- **N—Channel design:** Suitable for circuits requiring N-type field effect transistors.
- **Medium voltage, high current:** Suitable for power management applications requiring larger current under medium voltage conditions.
- **Low turn-on resistance:** Provides lower on-resistance, helping to improve circuit performance.
This VBsemi UT2306G-AE3-R-VB field effect transistor is suitable for a variety of power management and power control applications, especially scenarios with high current requirements under medium voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
**VBsemi UT2306G-AE3-R-VB** - **Parameter Description: ** -Package type: SOT23-3 -Channel type: N—Channel -Maximum withstand voltage: 30V -Maximum current: 6.
5A -Turn-on voltage (gate-source voltage): Vth=1.
2~2.
2V -Turn on the resistor:RDS(ON)=30mΩ @ VGS=10V, VGS=20V
5A -Turn-on voltage (gate-source voltage): Vth=1.
2~2.
2V -Turn on the resistor:RDS(ON)=30mΩ @ VGS=10V, VGS=20V
Domain and module applications：
**Domains and module applications:**-**Power management module: **due to itsN—ChannelDesign and larger current capabilities, can be used in medium voltage power management modules. - **motor driven: **Suitable for motor drive circuits that need to control larger currents. - **Power inverter: **For building medium power DC to AC power inverters. - **LEDdrive: **Due to its low turn-on resistance, it can be usedleddrive circuit to improve efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
