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TSM3404CX RF-VB Product details
Back to previous pageProduct introduction：
Application Brief: The TSM3404CX RF-VB is an N-channel MOSFET with medium voltage and current capabilities suitable for a variety of electronic applications.
The characteristics of this MOSFET make it suitable for a variety of low to medium power electronic applications, especially in When high performance is required in a limited space.
However, when selecting and using this device, a detailed understanding of its data sheet and performance parameters is still required to ensure that it meets the requirements of a specific application.
The characteristics of this MOSFET make it suitable for a variety of low to medium power electronic applications, especially in When high performance is required in a limited space.
However, when selecting and using this device, a detailed understanding of its data sheet and performance parameters is still required to ensure that it meets the requirements of a specific application.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
model: TSM3404CX RF-VBSilk screen: VB1330brand: VBsemiparameter: -type:Nchannel -Maximum withstand voltage: 30V -Maximum current: 6.
5A -Static turn-on resistor (RDS(ON)): 30mΩ @ 10V, 33mΩ @ 4.
5V -Gate-source voltage (Vgs): 20V (±V) -threshold voltage (Vth): 1.
2~2.
2V -Package type:SOT23-3
5A -Static turn-on resistor (RDS(ON)): 30mΩ @ 10V, 33mΩ @ 4.
5V -Gate-source voltage (Vgs): 20V (±V) -threshold voltage (Vth): 1.
2~2.
2V -Package type:SOT23-3
Domain and module applications：
Here are some possible application areas: 1.Power module: this oneMOSFETIt can be used in power switches in small power modules to help improve the efficiency of power management and is suitable for portable devices, embedded systems and power inverters. 2.Battery management: It can also be used in battery management systems to control the charging and discharging of batteries to ensure battery safety and performance. 3.Low-power electronics: Due to its low on-resistance and moderate current handling capability, it is suitable for electronic devices that require low-power operation, such as sensor nodes, portable medical equipment, and wireless communication modules. 4.motor driven:TSM3404CX RF-VBCan be used in small motor drive circuits such as motor controllers and power tools to achieve efficient motor operation. 5.Analog circuits: In some analog circuits, such as signal amplifiers and filters, you can useTSM3404CX RF-VBto achieve precise signal control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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