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SMG2306NE-VB Product details

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Product introduction：

VBsemi SMG2306NE-VB is an N-Channel field effect transistor in SOT23-3 package.
- **Application Introduction:** - Applicable package: SOT23-3 - Main purpose: used as N-Channel field effect transistor, suitable for working in low voltage and medium current applications.
This device is suitable for applications requiring efficient power management and control, such as power adapters, battery management, and other applications that require regulated power.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 30V 20（±V） 1.7V 6.5A 33(mΩ) 30(mΩ)
**Parameter Description :** -Operating Voltage(VDS) : 30V -Continuous drain current ( ID): 6.
5A -Turn on the resistor (RDS(ON)) : 30mΩ @ VGS=10V, VGS=20V -threshold voltage (vth): 1.
2~2.
2V

Domain and module applications：

**Field application :** -Power management module -Current control module -Low voltage, medium current switching power supply - **Module application :** -Used in voltage regulator, switching and power control modules. -It is widely used in electronic equipment that requires efficient energy consumption and compact space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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