Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N-Channel |
30V |
20(±V) |
1.7V |
6.5A |
|
33(mΩ) |
30(mΩ) |
|
VBsemi RTR030N05TL-VBis a N—ChannelChannel field effect transistor, the specific parameters are as follows: -Rated voltage (VDS): 30V -Rated current (ID): 6.
5A -static drain-Source resistance (RDS(ON)):30mΩ(existVGS=10V, VGS=20Vhour) -threshold voltage (vth): 1.
2~2.
2VPackaged as SOT23-3.
Domain and module applications:
**Typical application areas and modules:** 1. **Power amplifier module: **Due to its high current handling capability, it can be used in audio power amplifier modules. 2. **Switching power supply module: **Suitable for switching power supply modules to provide stable power output. 3. **Drive circuit: **Can be used for various needs N—ChannelChannel drive circuit.This transistor can be designed for use in electronic devices that require low leakage current, high efficiency and higher power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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