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MEM2310XG-VB Product details
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Model: MEM2310XG Silk screen: VB1330 Brand: VBsemi Application introduction: MEM2310XG (silk screen: VB1330) is an N-channel power MOSFET produced by VBsemi.
The following is a detailed parameter description and application introduction: Detailed parameter description: MEM2310XG is an N-channel power MOSFET, suitable for a variety of fields and application scenarios.
The main parameters include rated voltage of 30V, rated current of 6.
5A, RDS(ON) of 30mΩ @ 10V, 33mΩ @ 4.
5V, gate-source voltage range of 20V, gate-source threshold voltage range of 1.
2V~2.
2V, and package type: SOT23-3.
MEM2310XG (VB1330) is an N-channel power MOSFET, suitable for modules in power management modules, inverters and converters, and LED drivers.
It has low on-resistance and high reliability, making it suitable for circuits requiring high efficiency and current control.
The following is a detailed parameter description and application introduction: Detailed parameter description: MEM2310XG is an N-channel power MOSFET, suitable for a variety of fields and application scenarios.
The main parameters include rated voltage of 30V, rated current of 6.
5A, RDS(ON) of 30mΩ @ 10V, 33mΩ @ 4.
5V, gate-source voltage range of 20V, gate-source threshold voltage range of 1.
2V~2.
2V, and package type: SOT23-3.
MEM2310XG (VB1330) is an N-channel power MOSFET, suitable for modules in power management modules, inverters and converters, and LED drivers.
It has low on-resistance and high reliability, making it suitable for circuits requiring high efficiency and current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
parameter: -Channel type:Nchannel -Rated voltage: 30V -Rated current:6.
5A-RDS(ON):30mΩ@10V, 33mΩ @ 4.
5V -Gate-source voltage range: 20V -Gate-source threshold voltage range: 1.
2V~2.
2V -Package type:SOT23-3
5A-RDS(ON):30mΩ@10V, 33mΩ @ 4.
5V -Gate-source voltage range: 20V -Gate-source threshold voltage range: 1.
2V~2.
2V -Package type:SOT23-3
Domain and module applications：
Application areas: MEM2310XG(VB1330) is suitable for a variety of fields and application scenarios, mainly used forNChannel powerMOSFETcircuit design. The following are some typical application areas: 1.Power management module:MEM2310XGIt can be used in power management modules to provide efficient power conversion and stable current output, improving system power consumption and efficiency. 2.Inverters and converters: It is suitable for the design of switching circuits in inverters and converters, providing reliable current control and power conversion. 3.LEDdrive:MEM2310XGAlso applies toledThe drive circuit provides stable current control and high-efficiency power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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