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MEM2310M3G-VB Product details

Product introduction:

**VBsemi MEM2310M3G-VB N-Channel MOSFET** - MEM2310M3G-VB is an N-Channel channel MOSFET launched by the VBsemi brand, specially designed for high-performance electronic systems.
- Superior current and voltage characteristics make it ideal in a variety of circuits.
This MOSFET can be widely used in power converters, power management systems, communication equipment and other fields to provide efficient, stable power supply and reliable switching control for electronic systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 30V 20(±V) 1.7V 6.5A 33(mΩ) 30(mΩ)
**Detailed parameter description:** - Operating voltage: 30V - Continuous drain current: 6.
5A - On-state resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V - Threshold voltage (Vth): 1.
2~ 2.
2V - **Package:** SOT23-3

Domain and module applications:

**Application areas:** 1. **Power converter: **Suitable for power modules, providing efficient power conversion and stable power output. 2. **Power management system: **In applications requiring high-performance power management, such as portable devices and embedded systems. 3. **communication device: **Used for current control and switching operations to improve the performance of communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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