Product introduction:
ME2316-VB is a VBsemi brand N-channel field effect transistor with the following characteristics: This device is suitable for SOT23-3 packaging and is commonly used in electronic modules, especially for circuits and modules that require N-channel field effect transistors.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
30V |
|
1.7V |
6.5A |
|
33(mΩ) |
30(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOT23-3 |
Single-N-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOT23-3 |
Single-N-Channel |
30V |
|
1.7V |
6.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOT23-3 |
Single-N-Channel |
30V |
|
1.7V |
6.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOT23-3 |
Single-N-Channel |
|
|
|
|
|
|
|
parameter: -Package: SOT23-3 -Operating Voltage: 30V -Maximum continuous leakage current: 6.
5A -On resistance: 30mΩ @ VGS=10V, VGS=20V -Threshold voltage:1.
2~2.
2V
Domain and module applications:
It is widely used in power management, drivers, current control and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours