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HM3400C-VB Product details
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Model: HM3400C-VB Silk screen: VB1330 Brand: VBsemi **Detailed parameter description:** 1.
**Package Type:** SOT23-3, indicating that the device uses SOT23-3 packaging.
2.
**Channel Type:** N-Channel, indicating that this is an N-channel MOSFET.
3.
**Rated Voltage:** 30V, indicating the maximum voltage at which the device can operate normally.
4.
**Maximum Current:** 6.
5A, indicating the maximum current that the device can withstand.
5.
**On-State Resistance:** RDS(ON) = 30mΩ @ VGS=10V, VGS=20V, indicating the resistance in the open state under a specific gate-source voltage.
6.
**Threshold Voltage:** Vth = 1.
2~2.
2V, indicating the voltage range required for the device to switch from the off state to the on state under the action of the gate-source voltage.
HM3400C-VB is an N-Channel MOSFET suitable for a variety of applications
**Package Type:** SOT23-3, indicating that the device uses SOT23-3 packaging.
2.
**Channel Type:** N-Channel, indicating that this is an N-channel MOSFET.
3.
**Rated Voltage:** 30V, indicating the maximum voltage at which the device can operate normally.
4.
**Maximum Current:** 6.
5A, indicating the maximum current that the device can withstand.
5.
**On-State Resistance:** RDS(ON) = 30mΩ @ VGS=10V, VGS=20V, indicating the resistance in the open state under a specific gate-source voltage.
6.
**Threshold Voltage:** Vth = 1.
2~2.
2V, indicating the voltage range required for the device to switch from the off state to the on state under the action of the gate-source voltage.
HM3400C-VB is an N-Channel MOSFET suitable for a variety of applications
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
parameter : -Package type : SOT23-3 -Channel type :N-Channel-Rated voltage : 30V -Maximum current : 6.
5A -On-state resistance : RDS(ON) = 30mΩ @ VGS=10V, VGS=20V -threshold voltage : Vth = 1.
2~2.
2Vencapsulation : SOT23-3
5A -On-state resistance : RDS(ON) = 30mΩ @ VGS=10V, VGS=20V -threshold voltage : Vth = 1.
2~2.
2Vencapsulation : SOT23-3
Domain and module applications：
1. **switch :**due to itsNChannel properties, can be used in power switches and power inverters. 2. **battery protection :**Suitable for battery management systems to protect batteries from over-discharge and over-charge. 3. **Power inverter :**Used in solar inverters and other power inverters to provide efficient energy conversion. 4. **Power management module :**Suitable for various power management applications, such as switching power supply, battery management, etc.Please note that the device's data sheet and application manual should be carefully consulted in specific designs to ensure proper use and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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