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2312-VB Product details
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VBsemi 2312-VB is an N-Channel field effect transistor.
This transistor is suitable for various electronic fields, especially in circuits requiring N-Channel channels, such as power amplifiers, switching power supplies, etc.
Due to its low drain-source resistance and high current handling capability, it can be used in circuits requiring higher power and efficiency.
**Key Features:** - Ultra-low drain-source resistance - High current handling capability - Ideal for applications such as load switches and power amplifiers
This transistor is suitable for various electronic fields, especially in circuits requiring N-Channel channels, such as power amplifiers, switching power supplies, etc.
Due to its low drain-source resistance and high current handling capability, it can be used in circuits requiring higher power and efficiency.
**Key Features:** - Ultra-low drain-source resistance - High current handling capability - Ideal for applications such as load switches and power amplifiers
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
The specific parameters are as follows: -Rated voltage (VDS): 30V -Rated current (ID): 6.
5A -static drain-Source resistance (RDS(ON)):30mΩ(existVGS=10V, VGS=20Vhour) -threshold voltage (vth): 1.
2~2.
2VPackaged as SOT23-3.
5A -static drain-Source resistance (RDS(ON)):30mΩ(existVGS=10V, VGS=20Vhour) -threshold voltage (vth): 1.
2~2.
2VPackaged as SOT23-3.
Domain and module applications：
**Typical application areas and modules:** 1. **Power amplifier module: **Due to its high current handling capability, it can be used in audio power amplifier modules. 2. **Switching power supply module: **Suitable for switching power supply modules to provide stable power output. 3. **Drive circuit: **Can be used for various needs N—ChannelChannel drive circuit.This transistor can be designed for use in electronic devices that require low leakage current, high efficiency and higher power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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