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2306AGN-HF-VB Product details
Back to previous pageProduct introduction：
Product model: 2306AGN-HF-VB Brand: VBsemi Package: SOT23-3 Silk screen: VB1330 **Detailed parameter description:** 2306AGN-HF-VB is an N-Channel field effect transistor, using SOT23-3 package.
Its maximum operating voltage is 30V, the maximum continuous current is 6.
5A, and it has low on-state resistance, RDS(ON) is 30mΩ, when the Gate-Source voltage is 10V or 20V.
The threshold voltage (Vth) is in the range of 1.
2~2.
2V.
The silk screen is marked VB1330.
**Application Introduction:** 2306AGN-HF-VB is suitable for various electronic fields.
As an N-Channel MOSFET, 2306AGN-HF-VB is widely used in power management, electronic drivers, consumer electronics and other fields, providing various modules with Efficient, reliable electronic component support.
Its maximum operating voltage is 30V, the maximum continuous current is 6.
5A, and it has low on-state resistance, RDS(ON) is 30mΩ, when the Gate-Source voltage is 10V or 20V.
The threshold voltage (Vth) is in the range of 1.
2~2.
2V.
The silk screen is marked VB1330.
**Application Introduction:** 2306AGN-HF-VB is suitable for various electronic fields.
As an N-Channel MOSFET, 2306AGN-HF-VB is widely used in power management, electronic drivers, consumer electronics and other fields, providing various modules with Efficient, reliable electronic component support.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
parameter: -Channel type: N—Channel -Maximum working voltage: 30V -Maximum continuous current: 6.
5A -On resistance: RDS(ON) = 30mΩ @ VGS=10V, VGS=20V -Threshold voltage:Vth = 1.
2~2.
2V
5A -On resistance: RDS(ON) = 30mΩ @ VGS=10V, VGS=20V -Threshold voltage:Vth = 1.
2~2.
2V
Domain and module applications：
1. **Power module: **Due to its low on-state resistance and moderate voltage tolerance,2306AGN-HF-VBOften used in power switch modules to provide high efficiency and reliability. 2. **Drive circuit: **asN-Channel MOSFET,2306AGN-HF-VBCan be used in various drive circuits, such as motor control,ledDrive, etc., improve system performance with its high current carrying capacity and low on-resistance. 3. **Power management: **In the field of power management,2306AGN-HF-VBIt is often used in circuits such as switching power supplies and voltage regulators to achieve efficient power conversion and stable power output. 4. **Consumer Electronics: **In consumer electronics such as mobile phones and tablets,2306AGN-HF-VBCan be used in power amplifiers, charge management and other circuits to ensure device performance and battery life. 5. **Automatic Control System: **Due to its high current carrying capacity and reliability,2306AGN-HF-VBIt is also suitable for various automatic control systems, such as industrial automation, robots, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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