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VS2018AL-VB Product details

Product introduction:

Product Introduction: VS2018AL-VB is an N-channel field effect transistor produced by VBsemi and is packaged in SOT23-3.
It features a drain-source voltage of 30V, a drain current of 6.
5A, and low on-resistance at different gate-source voltages.
Suitable for a variety of circuit applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 30V 20(±V) 1.7V 6.5A 33(mΩ) 30(mΩ)
Detailed parameter description: -brand:VBsemi-model: VS2018AL-VB -Package: SOT23-3 -type:Nchannel field effect transistor -maximum drain-Source voltage (VDS): 30V -Maximum drain current (ID): 6.
5A -On-resistance (RDS(ON)): -VGS=10Vhour:30mΩ-VGS=4.
5Vhour: 33mΩ -gate-Source voltage (VGS): 20V -threshold voltage (vth): 1.
7V

Domain and module applications:

Applicable areas and module examples: 1.Power Management Module: Due to its low on-resistance and moderate drain current,VS2018AL-VBIt can be used in power switching and regulating circuits to achieve efficient energy conversion and power management. 2.Motor Driver: Its high drain current and stable performance makeVS2018AL-VBSuitable for use in motor drivers and controllers to provide reliable power output and drive performance. 3.LEDDrive: inledIn lighting applications,VS2018AL-VBCan be used asleddriver circuit, controlledof brightness and light effects to achieve efficient lighting solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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