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WTC2306-VB Product details
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**Product Model:** WTC2306-VB **Silkscreen:** VB1240 **Brand:** VBsemi **Application Introduction:** This MOSFET is suitable for various electronic devices and modules, especially in circuits that need to control current.
Due to its N-channel characteristics, it is often used in applications that amplify, switch, and regulate current.
It has a wide range of applications in power management, drive circuits, and power amplifiers.
This MOSFET is suitable for electronic applications that require high performance and reliability, providing flexible current control and switching functions for various circuits.
Due to its N-channel characteristics, it is often used in applications that amplify, switch, and regulate current.
It has a wide range of applications in power management, drive circuits, and power amplifiers.
This MOSFET is suitable for electronic applications that require high performance and reliability, providing flexible current control and switching functions for various circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | 42（mΩ） | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
**parameter :** -Package Type : SOT23 -Channel Type : N—Channel -Maximum operating voltage : 20V -Maximum operating current : 6A -On resistance (RDS(ON)）: - RDS(ON)=28(mΩ)@VGS=4.
5V,42（mΩ） @VGS=2.
5V; - 24mΩ @ VGS=8V -Threshold voltage (Vth）: 0.
5~1.
5V **Encapsulation:** SOT23 **Detailed parameter description:** WTC2306-VBIs aN-Channel Field Effect Transistor (N-Channel MOSFET),useSOT23package.
Its main parameters include maximum operating voltage20V, maximum operating current6A, and low on-resistance (RDS(ON))in differenceGate-Sourceperformance under voltage.
Threshold voltage (Vth)exist0.
5~1.
5Vwithin the range.
5V,42（mΩ） @VGS=2.
5V; - 24mΩ @ VGS=8V -Threshold voltage (Vth）: 0.
5~1.
5V **Encapsulation:** SOT23 **Detailed parameter description:** WTC2306-VBIs aN-Channel Field Effect Transistor (N-Channel MOSFET),useSOT23package.
Its main parameters include maximum operating voltage20V, maximum operating current6A, and low on-resistance (RDS(ON))in differenceGate-Sourceperformance under voltage.
Threshold voltage (Vth)exist0.
5~1.
5Vwithin the range.
Domain and module applications：
**Main application areas and modules:** 1.
**Power Management Module :**Used for power switching and current regulation.
2.
**Drive circuit :**Used for driving switching current and controlling current.
3.
**Power amplifier module :**Used in amplifiers where efficient power consumption is required.
**Power Management Module :**Used for power switching and current regulation.
2.
**Drive circuit :**Used for driving switching current and controlling current.
3.
**Power amplifier module :**Used in amplifiers where efficient power consumption is required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
