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UT2308G-AE3-R-VB Product details
Back to previous pageProduct introduction：
**Application Introduction:** UT2308G-AE3-R-VB is an N-Channel trench MOSFET in SOT23 package.
With a rated voltage of 20V and a rated current of 6A, RDS(ON) performs well at different voltages and is suitable for low voltage drop and high efficiency applications.
The above are the main parameters and application introduction of UT2308G-AE3-R-VB, which can be widely used in the electronic field requiring N-Channel MOSFET, especially in the circuit design requiring high efficiency and low voltage drop.
With a rated voltage of 20V and a rated current of 6A, RDS(ON) performs well at different voltages and is suitable for low voltage drop and high efficiency applications.
The above are the main parameters and application introduction of UT2308G-AE3-R-VB, which can be widely used in the electronic field requiring N-Channel MOSFET, especially in the circuit design requiring high efficiency and low voltage drop.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | 42（mΩ） | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
**Parameter Description: ** -Silk Screen: VB1240 -brand: VBsemi -Package: SOT23 -type:N—ChannelChannel -Rated voltage: 20V -Rated current:6A - RDS(ON):RDS(ON)=28(mΩ)@VGS=4.
5V,42（mΩ） @VGS=2.
5V; VGS=8V -Threshold voltage:Vth=0.
5~1.
5V
5V,42（mΩ） @VGS=2.
5V; VGS=8V -Threshold voltage:Vth=0.
5~1.
5V
Domain and module applications：
**Applicable fields and modules:** 1.
**Power management module:** Due to the low resistance state (RDS(ON)), it is suitable for designing high-efficiency power switch modules to improve energy utilization.
2.
**Current control application:** It can be used in current control modules such as current source, current limiter, etc.
3.
**Battery protection module:** In battery management, it can be used to design protection circuits to ensure stable and safe charging and discharging of batteries.
4.
**DC-DC converter:** It is suitable for DC-DC converters to achieve high-efficiency energy conversion, especially for portable electronic devices.
**Power management module:** Due to the low resistance state (RDS(ON)), it is suitable for designing high-efficiency power switch modules to improve energy utilization.
2.
**Current control application:** It can be used in current control modules such as current source, current limiter, etc.
3.
**Battery protection module:** In battery management, it can be used to design protection circuits to ensure stable and safe charging and discharging of batteries.
4.
**DC-DC converter:** It is suitable for DC-DC converters to achieve high-efficiency energy conversion, especially for portable electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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