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TN0201T-T1-E3-VB Product details
Back to previous pageProduct introduction：
TN0201T-T1-E3-VB is an N-Channel trench field effect transistor in SOT23 package produced by VBsemi.
**Application Introduction:** This device is suitable for various power management and switching circuits.
Key features include low drain-source resistance, low threshold voltage and high withstand voltage capability, making it excellent in many applications.
Overall, TN0201T-T1-E3-VB plays a role in high-performance circuits requiring N-Channel trench MOSFETs, providing reliable power switching and regulation functions.
**Application Introduction:** This device is suitable for various power management and switching circuits.
Key features include low drain-source resistance, low threshold voltage and high withstand voltage capability, making it excellent in many applications.
Overall, TN0201T-T1-E3-VB plays a role in high-performance circuits requiring N-Channel trench MOSFETs, providing reliable power switching and regulation functions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | 42（mΩ） | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
**specification: ** -Package Type: SOT23 -polarity: N-Channel -Rated voltage: 20V -Rated current: 6A -Static Drain-Source resistance (RDS(ON)): - RDS(ON)=28(mΩ)@VGS=4.
5V,42（mΩ） @VGS=2.
5V; - 24mΩ @ VGS=8V -Threshold voltage (Vth):0.
5~1.
5V
5V,42（mΩ） @VGS=2.
5V; - 24mΩ @ VGS=8V -Threshold voltage (Vth):0.
5~1.
5V
Domain and module applications：
**Applicable areas and modules:** 1.
**Power Management Module: **Due to the low drain-Source resistance and high current capability for use in power switching and regulation circuits.
2.
**Switching power supply module: **Applicable to the power switch part of the switching power supply to improve efficiency and performance.
3.
**Driver module: **It can be used as a power switching element in various drive circuits to ensure high efficiency and reliability.
4.
**Power tools and electric vehicles: **Among these applications, it can be used for battery management and electric motor control.
**Power Management Module: **Due to the low drain-Source resistance and high current capability for use in power switching and regulation circuits.
2.
**Switching power supply module: **Applicable to the power switch part of the switching power supply to improve efficiency and performance.
3.
**Driver module: **It can be used as a power switching element in various drive circuits to ensure high efficiency and reliability.
4.
**Power tools and electric vehicles: **Among these applications, it can be used for battery management and electric motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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