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STS2306-VB Product details
Back to previous pageProduct introduction：
Application Introduction: This MOSFET is suitable for low-power applications such as power management, switch modules and circuit control.
Its small package and low voltage characteristics make it widely used in portable devices and low-power applications.
Function: 1.
Provide high efficiency capabilities for low-power applications.
2.
Realize stable power switching and power management in small-size circuits.
3.
Suitable for portable devices and low-power applications.
Precautions for use: 1.
Please operate according to the maximum ratings provided in the data sheet to avoid damage to the device.
2.
Consider appropriate heat dissipation measures in the design to ensure that the device operates stably at the rated operating temperature.
3.
Avoid exceeding the maximum rated current and voltage to prevent overloading of the device.
4.
During use, pay attention to electrostatic protection to avoid damage to sensitive components.
Its small package and low voltage characteristics make it widely used in portable devices and low-power applications.
Function: 1.
Provide high efficiency capabilities for low-power applications.
2.
Realize stable power switching and power management in small-size circuits.
3.
Suitable for portable devices and low-power applications.
Precautions for use: 1.
Please operate according to the maximum ratings provided in the data sheet to avoid damage to the device.
2.
Consider appropriate heat dissipation measures in the design to ensure that the device operates stably at the rated operating temperature.
3.
Avoid exceeding the maximum rated current and voltage to prevent overloading of the device.
4.
During use, pay attention to electrostatic protection to avoid damage to sensitive components.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | 42（mΩ） | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
VBsemi STS2306-VB MOSFETparameter: -Package: SOT23 -Channel Type: N—Channel -Maximum Voltage: 20V -Maximum current:6A - RDS(ON):RDS(ON)=28(mΩ)@VGS=4.
5V,42（mΩ） @VGS=2.
5V; VGS=8V -Threshold voltage:0.
5~1.
5V
5V,42（mΩ） @VGS=2.
5V; VGS=8V -Threshold voltage:0.
5~1.
5V
Domain and module applications：
Using domain modules: 1.
Power management: used for low-power power switches and voltage regulator circuits.
2.
Switch module: used as a power switching element in a low-power switching power supply.
3.
Circuit Control: Used for power switching and control of logic circuits.
Power management: used for low-power power switches and voltage regulator circuits.
2.
Switch module: used as a power switching element in a low-power switching power supply.
3.
Circuit Control: Used for power switching and control of logic circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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