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SM2300NSA-VB Product details
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Model: SM2300NSA-VB Silk screen: VB1240 Brand: VBsemi Parameters: N-channel, 20V, 6A, RDS(ON) 24mΩ @ 4.
5V, 33mΩ @ 2.
5V, 8Vgs (±V); 0.
5~1.
5Vth (V) Package: SOT23 Application Introduction: This type of N-channel MOSFET is commonly used in various power management and switching applications, including but not limited to the following fields and modules: This type of N-channel MOSFET is suitable for electronic devices and modules in a variety of fields to meet the needs of power switching and power management, especially applications that need to handle positive voltage power supplies.
5V, 33mΩ @ 2.
5V, 8Vgs (±V); 0.
5~1.
5Vth (V) Package: SOT23 Application Introduction: This type of N-channel MOSFET is commonly used in various power management and switching applications, including but not limited to the following fields and modules: This type of N-channel MOSFET is suitable for electronic devices and modules in a variety of fields to meet the needs of power switching and power management, especially applications that need to handle positive voltage power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | 42（mΩ） | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
Application Introduction: 1.
Channel Type:NChannel -This means that this is aNChannelMOSFET, commonly used in electronic devices, especially applications that require controlled positive voltage supplies.
2.
Rated voltage (VDS): 20V -This is the channelMOSFETThe maximum voltage that can be tolerated indicates that it is suitable for applications that require handling up to20Vvoltage of the circuit.
3.
Rated current (ID): 6A -This is the channelMOSFETThe rated current indicates the maximum current load it can handle.
4.
Static Drain-Source resistance (RDS(ON)): -RDS(ON)It is a channelMOSFETThe resistance in the on-state.
4.
5VIn this case, its resistance is24mΩ, while2.
5VIn the case of33mΩThis means that in the on state, its resistance is relatively low, which helps to reduce power dissipation and heat.
5.
Gate-Source Voltage Rating (Vgs): 8V (±V) -This means that the gate-to-source voltage is rated for positive and negative8VThe gate-source voltage is used to controlMOSFETon and off states.
6.
Threshold voltage range (Vth): 0.
5Vto 1.
5V -This is the channelMOSFETThe threshold voltage range represents the voltage that needs to be applied to the gate to cause the device to start conducting.
In this case, the threshold voltage range is0.
5Vto1.
5V.
Channel Type:NChannel -This means that this is aNChannelMOSFET, commonly used in electronic devices, especially applications that require controlled positive voltage supplies.
2.
Rated voltage (VDS): 20V -This is the channelMOSFETThe maximum voltage that can be tolerated indicates that it is suitable for applications that require handling up to20Vvoltage of the circuit.
3.
Rated current (ID): 6A -This is the channelMOSFETThe rated current indicates the maximum current load it can handle.
4.
Static Drain-Source resistance (RDS(ON)): -RDS(ON)It is a channelMOSFETThe resistance in the on-state.
4.
5VIn this case, its resistance is24mΩ, while2.
5VIn the case of33mΩThis means that in the on state, its resistance is relatively low, which helps to reduce power dissipation and heat.
5.
Gate-Source Voltage Rating (Vgs): 8V (±V) -This means that the gate-to-source voltage is rated for positive and negative8VThe gate-source voltage is used to controlMOSFETon and off states.
6.
Threshold voltage range (Vth): 0.
5Vto 1.
5V -This is the channelMOSFETThe threshold voltage range represents the voltage that needs to be applied to the gate to cause the device to start conducting.
In this case, the threshold voltage range is0.
5Vto1.
5V.
Domain and module applications：
1.
Power Switch: This MOSFET can be used in power switch modules such as DC-DC converters to achieve efficient power conversion.
2.
Battery Management: It can be used in battery protection circuits to control battery charging and discharging and prevent over-discharging.
3.
Power Inverter: In solar inverters and UPS (Uninterruptible Power Supply), N-channel MOSFET can be used to control the flow of power.
4.
Power Selection and Switching: It can be used in power selectors and power switches to switch between different power sources.
Power Switch: This MOSFET can be used in power switch modules such as DC-DC converters to achieve efficient power conversion.
2.
Battery Management: It can be used in battery protection circuits to control battery charging and discharging and prevent over-discharging.
3.
Power Inverter: In solar inverters and UPS (Uninterruptible Power Supply), N-channel MOSFET can be used to control the flow of power.
4.
Power Selection and Switching: It can be used in power selectors and power switches to switch between different power sources.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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