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SI2312CDS-T1-GE3-VB Product details

Product introduction:

Model: SI2312CDS-T1-GE3-VB Silkscreen: VB1240 Brand: VBsemi Application Introduction: SI2312CDS-T1-GE3-VB is an N-Channel field effect transistor, packaged as SOT23.
The high current and low on-resistance of SI2312CDS-T1-GE3-VB make it perform well in the above applications, and it is a versatile and reliable field effect transistor.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 20V 12(±V) 0.5~1.5V 6A 42(mΩ) 28(mΩ)
parameter: -Package: SOT23 -Channel Type:N—Channel -Rated voltage: 20V -Maximum current: 6A -On-state resistance: RDS(ON)=24mΩ@VGS=4.
5V,VGS=8V -Threshold voltage:Vth=0.
5~1.
5V

Domain and module applications:

1.
**Power switch module: **Applicable to power switch circuits, it can realize efficient power management and improve power conversion efficiency.
2.
**Current control module: **Used in circuits that require current regulation, such as current sources, current controllers, etc.
3.
**Driver module: **Can be used to drive various loads, such as drive motors,ledDriver, etc.
4.
**Power Inverter: **In power inverters, it can be used to achieve DC to AC conversion and is widely used in fields such as solar inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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