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SI2302DS-T1-GE3-VB Product details

Product introduction:

Application Introduction: SI2302DS-T1-GE3 is a medium-low voltage N-channel MOSFET suitable for applications such as power switching, motor control and voltage regulation.
Its low on-resistance and adjustable threshold voltage make it flexible in a variety of scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 20V 0.5~1.5V 6A 42(mΩ) 28(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-N-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-N-Channel 20V 0.5~1.5V 6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-N-Channel 20V 0.5~1.5V 6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-N-Channel
SI2302DS-T1-GE3 (VB1240)Parameter Description:NChannel,20V,6A, on-resistance24mΩ@4.
5V,33mΩ@2.
5V, gate-source voltage range8V(±V), adjustable threshold voltage range0.
5~1.
5V, package:SOT23.

Domain and module applications:

Advantages and applicable fields: With low on-resistance and adjustable threshold voltage, it is suitable for fields requiring low voltage drop and flexibility, such as battery management, portable devices andledDriver and other modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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