Application Introduction: SI2302DS-T1-GE3 is a medium-low voltage N-channel MOSFET suitable for applications such as power switching, motor control and voltage regulation. Its low on-resistance and adjustable threshold voltage make it flexible in a variety of scenarios.
SI2302DS-T1-GE3 (VB1240)Parameter Description:NChannel,20V,6A, on-resistance24mΩ@4. 5V,33mΩ@2. 5V, gate-source voltage range8V(±V), adjustable threshold voltage range0. 5~1. 5V, package:SOT23.
Domain and module applications：
Advantages and applicable fields: With low on-resistance and adjustable threshold voltage, it is suitable for fields requiring low voltage drop and flexibility, such as battery management, portable devices andledDriver and other modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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