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SI2302ADS-T1-GE3-VB Product details
Back to previous pageProduct introduction：
Application Introduction: SI2302ADS-T1-GE3-VB is an N-channel MOSFET with low threshold voltage, low on-resistance and moderate current-voltage characteristics.
These characteristics make it very useful in a variety of low-power, low-voltage applications.
SI2302ADS-T1-GE3-VB is suitable for a variety of low-power, low-voltage applications, including portable electronic devices, voltage regulators, battery protection, switching applications, and low-voltage logic level conversion modules.
Its low threshold voltage and low on-resistance make it an ideal choice for achieving efficient, low-power circuit operation.
These characteristics make it very useful in a variety of low-power, low-voltage applications.
SI2302ADS-T1-GE3-VB is suitable for a variety of low-power, low-voltage applications, including portable electronic devices, voltage regulators, battery protection, switching applications, and low-voltage logic level conversion modules.
Its low threshold voltage and low on-resistance make it an ideal choice for achieving efficient, low-power circuit operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | 42（mΩ） | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
model: SI2302ADS-T1-GE3-VBSilk Screen: VB1240brand: VBsemiparameter: -NChannel -Rated voltage: 20V -Maximum current: 6A -On-state resistance (RDS(ON)): 24mΩ @ 4.
5V, 33mΩ @ 2.
5V, 8Vgs (±V) -Threshold voltage (Vth): 0.
5~1.
5V -Package:SOT23
5V, 33mΩ @ 2.
5V, 8Vgs (±V) -Threshold voltage (Vth): 0.
5~1.
5V -Package:SOT23
Domain and module applications：
Main features and application areas: 1.
**Low power electronics**:becauseSI2302ADS-T1-GE3-VBIt has a low threshold voltage and on-state resistance, so it is suitable for low-power electronic devices such as portable electronic devices, smart handheld devices, and sensor nodes.
It can help extend battery life.
2.
**Voltage Regulator**:ShouldMOSFETCan be used in voltage regulator circuits to achieve efficient voltage step-down or step-up, especially at low input voltages.
3.
**Battery protection**: In mobile devices and battery-powered systems,SI2302ADS-T1-GE3-VBIt can be used in battery protection circuits to ensure the safety and stability of the battery during charging and discharging.
4.
**Switch Application**: Due to its high current rating, thisMOSFETIt is also suitable for switching circuits such as switching power supplies and switch controls.
5.
**Low Voltage Logic Level Translation**: Due to its low threshold voltage,SI2302ADS-T1-GE3-VBIt can be used for logic level conversion to help interconnect different levels.
**Low power electronics**:becauseSI2302ADS-T1-GE3-VBIt has a low threshold voltage and on-state resistance, so it is suitable for low-power electronic devices such as portable electronic devices, smart handheld devices, and sensor nodes.
It can help extend battery life.
2.
**Voltage Regulator**:ShouldMOSFETCan be used in voltage regulator circuits to achieve efficient voltage step-down or step-up, especially at low input voltages.
3.
**Battery protection**: In mobile devices and battery-powered systems,SI2302ADS-T1-GE3-VBIt can be used in battery protection circuits to ensure the safety and stability of the battery during charging and discharging.
4.
**Switch Application**: Due to its high current rating, thisMOSFETIt is also suitable for switching circuits such as switching power supplies and switch controls.
5.
**Low Voltage Logic Level Translation**: Due to its low threshold voltage,SI2302ADS-T1-GE3-VBIt can be used for logic level conversion to help interconnect different levels.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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