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SI2300DS-T1-GE3-VB Product details

Product introduction:

Application Introduction: SI2300DS-T1-GE3 is an N-channel MOSFET suitable for medium current and low voltage.
Its low threshold voltage makes it suitable for low voltage logic drive.
It is commonly used in mobile devices, low voltage applications, etc.
Advantages: Suitable for low voltage logic drive: The low threshold voltage characteristics are suitable for low voltage logic control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 20V 12(±V) 0.5~1.5V 6A 42(mΩ) 28(mΩ)
SI2300DS-T1-GE3parameter:NChannel , 20V, 6A, RDS(ON) 24mΩ@4.
5V, 33mΩ@2.
5V, 8Vgs(±V), 0.
5~1.
5Vth(V), SOT23

Domain and module applications:

Applicable to mobile devices: Applicable to mobile devices, low voltage applications and other fields.
Applicable modules:SI2300DS-T1-GE3Control modules for mobile devices and low voltage applications such as mobile phones, tablets, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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