RTM2302-VB Product details
Product introduction:
5V,42(mΩ)@VGS=2.
5V; VGS=8V - Threshold voltage: Vth=0.
5~1.
5V Application introduction: RTM2302-VB is an N-channel field effect transistor, which is widely used in various electronic devices and modules.
Its main features include 20V rated voltage, 6A rated current, low on-resistance and compact design suitable for SOT23 package.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | 42(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
5V,VGS=8V;Vth=0.
5~1.
5V;Package: SOT23
Domain and module applications:
**Power module: **In the power module,RTM2302-VBCan be used in power switches, voltage regulators and other power management applications.
2.
**electrical tools: **Can be used for power control and drive circuits in power tools.
3.
LEDillumination: **existledIn lighting systems, it can be used for dimming control and power management.
4.
**vehicle electronics: **Suitable for power switches and control circuits in automotive electronic systems.
5.
**communication device: **In communication equipment, it can be used for power management of power amplifiers and RF modules.
These applications showRTM2302-VBIt has a wide range of uses and can meet the needs of different fields.
N-channel field effect transistor requirements.
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