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MGSF2N02ELT1G-VB Product details
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Application Introduction: MGSF2N02ELT1G-VB is an N-channel MOSFET suitable for a variety of electronic devices and circuits.
It has a wide range of applications in modules in some specific fields.
In summary, MGSF2N02ELT1G-VB is a versatile N-channel MOSFET suitable for modules in a variety of fields, including power supplies, switching circuits, signal amplification, portable electronic devices, and battery management.
Its low on-resistance, low threshold voltage, small package, and high performance make it a key component of various electronic devices and systems, helping to improve efficiency and performance.
It has a wide range of applications in modules in some specific fields.
In summary, MGSF2N02ELT1G-VB is a versatile N-channel MOSFET suitable for modules in a variety of fields, including power supplies, switching circuits, signal amplification, portable electronic devices, and battery management.
Its low on-resistance, low threshold voltage, small package, and high performance make it a key component of various electronic devices and systems, helping to improve efficiency and performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | 42（mΩ） | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
model: MGSF2N02ELT1G-VBSilk Screen: VB1240brand: VBsemiParameter Description: - MOSFETtype:NChannel -Rated voltage: 20V -Maximum current: 6A -On-resistance (RDS(ON)): 24mΩ @ 4.
5V, 33mΩ @ 2.
5V, 8Vgs -Threshold voltage range (Vth): 0.
5Vto 1.
5V -Package:SOT23
5V, 33mΩ @ 2.
5V, 8Vgs -Threshold voltage range (Vth): 0.
5Vto 1.
5V -Package:SOT23
Domain and module applications：
**Application areas and module description:** 1.
**Power Module**: -Due to its low on-resistance and moderate current handling capability,MGSF2N02ELT1G-VBSuitable for small power modules.
-It can be used in portable electronic devices, battery charging management modules, low-power power supplies and other fields to provide efficient power conversion.
2.
**Switching Circuit**: -ShouldMOSFETCan be used in various switching circuits, such as switch dimming, switching power supply,PWMControl, etc.
-Used to achieve efficient switching control in lighting, communication equipment, power inverters and other fields.
3.
**Signal Amplifier Module**: -MGSF2N02ELT1G-VBThe low threshold voltage range makes it suitable for signal amplification and conditioning modules.
-Used for signal processing and amplification in audio amplifiers, signal processing circuits, sensor interfaces and other fields.
4.
**Portable Electronic Devices**: -Due to its small package and low power consumption, theMOSFETSuitable for portable electronic devices.
-It can be used in smart phones, tablet computers, portable audio devices and other fields to achieve efficient power management.
5.
**Battery Management Module**: -In battery management modules that require low power consumption and efficient energy management, theMOSFETCan be used for battery charging and discharging control.
-Used in portable electronic devices, solar chargers, portable power banks and other fields to provide reliable battery management.
**Power Module**: -Due to its low on-resistance and moderate current handling capability,MGSF2N02ELT1G-VBSuitable for small power modules.
-It can be used in portable electronic devices, battery charging management modules, low-power power supplies and other fields to provide efficient power conversion.
2.
**Switching Circuit**: -ShouldMOSFETCan be used in various switching circuits, such as switch dimming, switching power supply,PWMControl, etc.
-Used to achieve efficient switching control in lighting, communication equipment, power inverters and other fields.
3.
**Signal Amplifier Module**: -MGSF2N02ELT1G-VBThe low threshold voltage range makes it suitable for signal amplification and conditioning modules.
-Used for signal processing and amplification in audio amplifiers, signal processing circuits, sensor interfaces and other fields.
4.
**Portable Electronic Devices**: -Due to its small package and low power consumption, theMOSFETSuitable for portable electronic devices.
-It can be used in smart phones, tablet computers, portable audio devices and other fields to achieve efficient power management.
5.
**Battery Management Module**: -In battery management modules that require low power consumption and efficient energy management, theMOSFETCan be used for battery charging and discharging control.
-Used in portable electronic devices, solar chargers, portable power banks and other fields to provide reliable battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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