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MGSF1P02LT1G-VB Product details

Product introduction:

MGSF1P02LT1G-VB is a VBsemi brand N-Channel trench field effect transistor in SOT23 package.
**Application Introduction:** MGSF1P02LT1G-VB is suitable for circuits and modules that require N-Channel MOSFET.
Its low drain-source resistance and high rated current make it perform well in a variety of applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 20V 12(±V) 0.5~1.5V 6A 42(mΩ) 28(mΩ)
The following are the detailed parameters: -Rated voltage (VDS): 20V -Rated current (ID): 6A -Drain-Source resistance (RDS(ON)): RDS(ON)=28(mΩ)@VGS=4.
5V,42(mΩ) @VGS=2.
5V; VGS=8V -Threshold voltage (Vth): 0.
5~1.
5V

Domain and module applications:

**Field and module application:** 1.
**Power module:**MGSF1P02LT1G-VBCan be used to design efficient and stable power modules, supporting20VThe rated voltage and6Arated current, ensuring reliability and performance.
2.
**motor driven:**Suitable for driving circuits of small motors, providing high efficiency and reliability.
3.
LEDillumination: **existledIn lighting systems,MGSF1P02LT1G-VBCan be used as a key component for current regulation and protection, ensuringledstable job.
4.
**Battery Management System: **Used to design battery management circuits to support high current operations during battery charging and discharging.
Overall,MGSF1P02LT1G-VBIts excellent characteristics make it an ideal choice for a variety of electronic applications, including power systems, motor control,ledLighting and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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