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CPH3413-TL-E-VB Product details

Product introduction:

Application Introduction: This MOSFET is suitable for electronic modules and circuits requiring high performance.
Its low switching resistance and high current capability make it widely used in various fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 20V 0.5~1.5V 6A 42(mΩ) 28(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-N-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-N-Channel 20V 0.5~1.5V 6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-N-Channel 20V 0.5~1.5V 6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-N-Channel
VBsemi CPH3413-TL-E-VB MOSFETparameter: -Package: SOT23 -Channel Type:NChannel -Rated voltage: 20V -Rated current: 6A -Switch resistance:RDS(ON)=RDS(ON)=28(mΩ)@VGS=4.
5V,42(mΩ) @VGS=2.
5V; VGS=8V -Threshold voltage:Vth=0.
5~1.
5V

Domain and module applications:

Application areas: 1.
Power Module 2.
motor driver 3.
Inverter 4.
Power Management System 5.
Others that require high performanceNChannelMOSFETelectronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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