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AP2312GN-VB Product details

Product introduction:

AP2312GN-VB is a VBsemi brand N-Channel trench MOSFET in SOT23 package.
This MOSFET is suitable for high-performance switching and amplification circuit design.
In the fields of power management, battery management, DC-DC converters, etc.
, AP2312GN-VB can be used to improve system efficiency and performance and reduce power consumption.
Its SOT23 package is suitable for small electronic devices and circuit boards, with small size and excellent performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 20V 12(±V) 0.5~1.5V 6A 42(mΩ) 28(mΩ)
The main parameters include operating voltage20V, Current carrying capacity6A, On-resistanceRDS(ON)=24mΩ(existVGS=4.
5V,VGS=8VWhen), threshold voltageVthRange is0.
5~1.
5V.

Domain and module applications:

In the power module, battery management module and power control module,AP2312GN-VBIt can be used to realize high-efficiency power switching and signal amplification and has a wide range of applications.
Its reliability and high performance make it one of the most common components in electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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