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TSM2310CX RF-VB Product details

Product introduction:

Product Introduction: TSM2310CX RF-VB is an N-channel field effect transistor produced by VBsemi, using SOT23-3 package.
The device can withstand 6A current at 20V voltage.
Its RDS(ON) value is 28mΩ(@VGS=4.5V) and 42mΩ(@VGS=2.5V) at different VGS, VGS is 8V, and Vth is between 0.5~1.5V.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 20V 12(±V) 0.5~1.5V 6A 42(mΩ) 28(mΩ)
Detailed parameter description: -brand: VBsemi -model: TSM2310CX RF-VB -Package: SOT23-3 -polarity:NChannel -Maximum Voltage: 20V -Maximum current:6A - RDS(ON):28mΩ(@VGS=4.
5V),42mΩ(@VGS=2.
5V) - VGS:8V - Vth: 0.
5~1.
5V

Domain and module applications:

Examples of applicable areas and modules: 1.
Wireless communication module: Due to its small package and high power characteristics,TSM2310CX RF-VBSuitable for power amplifiers and switching circuits in wireless communication modules.
2.
RF applications: can be used for power amplifiers and RF switches in RF front-end modules, such as mobile phone RF front-ends,WiFiModules, etc.
3.
Vehicle electronic system: Applicable to electric vehicle control unit in vehicle electronic system (ECU), in-vehicle communication modules, etc.
to provide efficient power control and switching functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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