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TM2302N FN-VB Product details
Back to previous pageProduct introduction：
Brand: VBsemi Model: TM2302N FN-VB Package: SOT23-3 Channel type: N-channel Maximum withstand voltage: 20V Maximum current: 6A On-resistance: 28mΩ @ VGS=4.
5V, 42mΩ @ VGS=2.
5V Gate-source voltage: 8V Threshold voltage: 0.
5~1.
5V Product introduction: TM2302N FN-VB is an N-channel field effect transistor produced by VBsemi.
It has a maximum withstand voltage of 20V and a maximum current capability of 6A, suitable for various low-voltage applications.
The package is SOT23-3, which is convenient for use in miniaturized circuit design.
5V, 42mΩ @ VGS=2.
5V Gate-source voltage: 8V Threshold voltage: 0.
5~1.
5V Product introduction: TM2302N FN-VB is an N-channel field effect transistor produced by VBsemi.
It has a maximum withstand voltage of 20V and a maximum current capability of 6A, suitable for various low-voltage applications.
The package is SOT23-3, which is convenient for use in miniaturized circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | 42（mΩ） | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
Detailed parameter description: -brand: VBsemi -model: TM2302N FN-VB -Package: SOT23-3 -Channel Type:N-Channel -Maximum withstand voltage: 20V -Maximum current: 6A -On-resistance: 28mΩ @ VGS=4.
5V, 42mΩ @ VGS=2.
5V -Gate-Source Voltage: 8V -Threshold voltage:0.
5~1.
5V
5V, 42mΩ @ VGS=2.
5V -Gate-Source Voltage: 8V -Threshold voltage:0.
5~1.
5V
Domain and module applications：
Product application examples: 1.
Power Management:TM2302N FN-VBCan be used in low voltage power management circuits, such asDC-DCConverters and linear regulators provide reliable power regulation.
2.
Battery protection: In mobile devices and portable electronics, this transistor can be used in battery protection circuits to ensure safety and stability during battery charging and discharging.
3.
LEDDrive: Due to its low on-resistance and high withstand voltage characteristics,TM2302N FN-VBApplies toledDriver circuits for efficient lighting control and regulation.
Power Management:TM2302N FN-VBCan be used in low voltage power management circuits, such asDC-DCConverters and linear regulators provide reliable power regulation.
2.
Battery protection: In mobile devices and portable electronics, this transistor can be used in battery protection circuits to ensure safety and stability during battery charging and discharging.
3.
LEDDrive: Due to its low on-resistance and high withstand voltage characteristics,TM2302N FN-VBApplies toledDriver circuits for efficient lighting control and regulation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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