Product introduction:
VBW1101N是VBsemi推出的單顆N型場效應電晶體(FET),採用Trench工藝,具有高性能和可靠性,適用於各類大功率電源管理和電源控制應用,提供可靠的電源轉換和穩定的電流驅動能力。如工業電源、電機驅動器、高性能電源模組等。
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO3P |
Single-N |
100V |
20(±V) |
2.5V |
100A |
|
10 (mΩ) |
9 (mΩ) |
Trench |
**參數:** - **類型:**單N型 - **最大漏源電壓(VDS):**100V - **最大柵源電壓(VGS):**㊣20V - **閾值電壓(Vth):**2.5V - **VGS=4.5V時導通電阻(mΩ):**10mΩ - **VGS=10V時導通電阻(mΩ):**9mΩ - **最大漏極電流(ID):**100A - **技術:**溝槽 - **封裝:**TO3P
Domain and module applications:
**應用領域示例:** 1. **電源逆變器:**VBW1101N 可用於製造大功率電源逆變器,將直流電能轉換為交流電能,適用於工業電源、UPS(不間斷電源)等應用。 2. **工業電機驅動:**在工業電機驅動系統中,此電晶體可用於大功率電機驅動器中,實現高效穩定的電機控制。 3. **高性能功率模組:**在高性能功率模組中,VBW1101N 可作為開關管使用,實現高頻功率變換和穩定輸出。
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours