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VBTA4250N Product details
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VBTA4250N is a dual-channel power trench MOSFET produced by VBsemi. It is suitable for various circuit designs. It is suitable for module design in the fields of battery protection, low-power switching power supplies and signal amplifiers. It improves efficiency, reduces power consumption and ensures stability. Sexually significant advantages. Its parameter characteristics make it perform well in low-power, medium-voltage application environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SC75-6 | Dual-P+P | -20V | 12（±V） | -0.6V | -0.5A | 500(mΩ) | 450(mΩ) | Trench |
**Product model:** VBTA4250N
**Brand:** VBsemi
**parameter:**
- **Dual P+P:** Dual channel power type
- **VDS(V):** Gate-source voltage range: -20V
- **VGS(㊣V):** Gate-source voltage range: ㊣12V
- **Vth(V):** Threshold voltage: -0.6V
- **RDS(on) VGS=2.5V(m次):** Static on-resistance (when gate-source voltage is 2.5V): 500m次
- **RDS(on) VGS=4.5V(m次):** Static on-resistance (when gate-source voltage is 4.5V): 450m次
- **ID (A):** Gate-source current range: -0.5A
- **Technology:** Channel type
- **Package:** SC75-6
**Brand:** VBsemi
**parameter:**
- **Dual P+P:** Dual channel power type
- **VDS(V):** Gate-source voltage range: -20V
- **VGS(㊣V):** Gate-source voltage range: ㊣12V
- **Vth(V):** Threshold voltage: -0.6V
- **RDS(on) VGS=2.5V(m次):** Static on-resistance (when gate-source voltage is 2.5V): 500m次
- **RDS(on) VGS=4.5V(m次):** Static on-resistance (when gate-source voltage is 4.5V): 450m次
- **ID (A):** Gate-source current range: -0.5A
- **Technology:** Channel type
- **Package:** SC75-6
Domain and module applications：
**Application examples:**
**1. Battery protection module:**
The VBTA4250N's low power consumption and dual-channel design make it an ideal choice in battery protection modules. For example, it can be used in battery protection circuits in battery management systems to monitor battery voltage and current to protect batteries from overcharge, over-discharge, short circuit, etc.
**2. Low power consumption switching power supply:**
Because VBTA4250N has low static on-resistance and low power consumption characteristics, it is suitable for use in switching circuits in low-power switching power supplies. For example, it can be used in DC-DC converters in portable electronic devices to achieve efficient energy conversion and energy saving.
**3. Signal amplifier module:**
In the signal amplifier module, VBTA4250N can be used as a key component of the signal amplifier. Its low static on-resistance and dual-channel design can achieve fast amplification and precise control of signals, ensuring the stability and performance of the signal amplifier.
**1. Battery protection module:**
The VBTA4250N's low power consumption and dual-channel design make it an ideal choice in battery protection modules. For example, it can be used in battery protection circuits in battery management systems to monitor battery voltage and current to protect batteries from overcharge, over-discharge, short circuit, etc.
**2. Low power consumption switching power supply:**
Because VBTA4250N has low static on-resistance and low power consumption characteristics, it is suitable for use in switching circuits in low-power switching power supplies. For example, it can be used in DC-DC converters in portable electronic devices to achieve efficient energy conversion and energy saving.
**3. Signal amplifier module:**
In the signal amplifier module, VBTA4250N can be used as a key component of the signal amplifier. Its low static on-resistance and dual-channel design can achieve fast amplification and precise control of signals, ensuring the stability and performance of the signal amplifier.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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