VBTA32S3M Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SC75-6 | Dual-N+N | 20V | 20(±V) | 0.5~1.5V | 1A | 360/360(mΩ) | 300/300(mΩ) | Trench |
- Type: Dual N+N
- Rated drain-source voltage (VDS): 20V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 0.5~1.5V
- Turn on resistance (RDS(on)):
- When VGS=2.5V: 360m次/360m次
- When VGS=4.5V: 300m次/300m次
- Rated drain current (ID): 1A
- Technology: Trench
- Package: SC75-6
Domain and module applications:
1. Low-power electronic modules: Because VBTA32S3M has the characteristics of low threshold voltage and low turn-on resistance, it is suitable for power management and signal conditioning in low-power electronic modules. For example, it can be used in battery management circuits and power control modules in portable smart devices.
2. Sensor interface module: In the sensor interface module, VBTA32S3M can be used for power control and signal amplification of the sensor. For example, it can be used in sensor interface circuits in the field of industrial automation to achieve amplification and precise control of sensor signals.
3. Small motor drive module: Due to its low drain current and low power consumption, VBTA32S3M is suitable for current control and voltage regulation in small motor drive modules. For example, it can be used in small motor drive circuits in smart toys to achieve precise control of motor speed and steering.
Technical support:
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