Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TOLL |
Single |
100V |
±20V |
3V |
350A |
|
|
1.2(mΩ) |
SGT |
"VBGQT1101 is a single N-type MOSFET with the following characteristics:
- High voltage withstand capability: Rated Drain-Source Voltage (VDS) is 100V, suitable for operation in high-voltage environments.
- Wide operating voltage range: Rated Gate-Source Voltage (VGS) is ±20V, adaptable to various power supply voltages.
- Low threshold voltage: Threshold Voltage (Vth) is 3V, exhibiting fast response characteristics.
- Low drain-source resistance: At VGS=10V, the drain-source resistance is only 1.2mΩ, contributing to reduced power losses.
- High drain current: Drain Current (ID) is up to 350A, suitable for high-power applications."
Domain and module applications：
"Examples of Applications:
1. Power Modules: VBGQT1101 is suitable for use as a power switch in power modules, providing efficient and stable power conversion and regulation functions. It is widely used in DC-DC converters and AC-DC converters in the field of power electronics.
2. Electric Vehicle Controllers: Due to its high drain current and low drain-source resistance, VBGQT1101 is ideal for use as a power switch component in electric vehicle controllers, enabling efficient energy conversion and drive control for electric vehicles.
3. Industrial Automation: In the field of industrial automation, VBGQT1101 can be used in high-power applications such as motor drives, frequency converters, and UPS (Uninterruptible Power Supply) systems, providing reliable power switching functions to ensure stable operation of equipment and efficient energy utilization."
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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