Product Model: VBGQT1101
Brand: VBsemi
Specifications:
- Type: Single N MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
- Rated Drain-Source Voltage (VDS): 100V
- Rated Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3V
- Drain-Source Resistance at VGS=10V: 1.2mΩ
- Drain Current (ID): 350A
- Technology: SGT (Silicon-Germanium Technology)
Package: TOLL
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 100V | ±20V | 3V | 350A | 1.2(mΩ) | SGT |
VBGQT1101 is a single N-type MOSFET with the following characteristics:
- High voltage withstand capability: Rated Drain-Source Voltage (VDS) is 100V, suitable for operation in high-voltage environments.
- Wide operating voltage range: Rated Gate-Source Voltage (VGS) is ±20V, adaptable to various power supply voltages.
- Low threshold voltage: Threshold Voltage (Vth) is 3V, exhibiting fast response characteristics.
- Low drain-source resistance: At VGS=10V, the drain-source resistance is only 1.2mΩ, contributing to reduced power losses.
- High drain current: Drain Current (ID) is up to 350A, suitable for high-power applications.
Examples of Applications:
1. Power Modules: VBGQT1101 is suitable for use as a power switch in power modules, providing efficient and stable power conversion and regulation functions. It is widely used in DC-DC converters and AC-DC converters in the field of power electronics.
2. Electric Vehicle Controllers: Due to its high drain current and low drain-source resistance, VBGQT1101 is ideal for use as a power switch component in electric vehicle controllers, enabling efficient energy conversion and drive control for electric vehicles.
3. Industrial Automation: In the field of industrial automation, VBGQT1101 can be used in high-power applications such as motor drives, frequency converters, and UPS (Uninterruptible Power Supply) systems, providing reliable power switching functions to ensure stable operation of equipment and efficient energy utilization.
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