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VBP113MI25B Product details

Product introduction:

"Product Introduction:
VBP113MI25B is a single N-type power field-effect transistor (MOSFET) manufactured by VB Company, packaged in TO247. This product is suitable for high-voltage, high-current power electronic applications."

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Product parameter:

VB Package Configuration VCE VGE VGEth(V) ICE VCEsat15V Technology
TO247 Single-N 1350 ±30 5.5 25 2 BD
"Detailed parameter specifications:
- Product Model: VBP113MI25B
- Package Type: TO247
- Configuration: Single N-type
- Collector-Emitter Voltage (VCE): 1350V
- Gate-Emitter Voltage Range (VGE): ±30V
- Gate-Emitter Threshold Voltage (VGEth): 5.5V
- Collector-Emitter Saturation Voltage (VCEsat) at saturation: 2V (typical value at VGE=15V)
- Rated Collector Current (ICE): 25A
- Technology: BD"

Domain and module applications:

"Applicable Fields and Module Examples:
1. Industrial Motor Controllers: The VBP113MI25B can be used in power switch modules in industrial motor controllers, controlling the start-stop and speed regulation of high-power motors.
2. High Voltage DC Power Supply: This device is suitable for power switch modules in high voltage DC power supplies, providing stable high voltage DC power for laboratory equipment or specific applications.
3. High Voltage Power Transmission Systems: The VBP113MI25B is suitable for power switch modules in high voltage power transmission systems, used to achieve power conversion, transmission, and distribution.

The above paragraphs provide a brief introduction, detailed parameter description, and examples of applicable fields for the VBP113MI25B product."
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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