VBL712MC30 Product details
Product introduction:
This SiC-S technology MOSFET, with high voltage, high leakage current and low on resistance, is suitable for use in high voltage, high frequency power electronics applications. Its single-channel N-type configuration makes it suitable for a variety of single-or dual-end power converters and inverter designs.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Single N | 1200V | -10 / +22 | 2~4 | 30A | 80 | SiC-S |
Package type: TO263-7L
Configuration: Single channel N type
Maximum drain-source voltage (VDS): 1200V
Gate-source voltage range (VGE): -10V to +22V
Threshold voltage (Vthtyp): 2~4V
Drain-source on-resistance @ VGS=18V (RDS(on)@VGS=18V): Typical value is 80mΩ
Drain current (ID): 30A
Technology: Silicon Carbide (SiC-S)
Domain and module applications:
1. * * Industrial power supply * *: VBL712MC30 can be used to design industrial grade frequency converters, AC governor and other industrial power supply systems that require high efficiency and high reliability.
2. * * Solar inverter * *: In the solar inverter, VBL712MC30 can be used as a high-efficiency power switch to improve the conversion efficiency of the photovoltaic power generation system.
3. * * Electric vehicle charging pile * *: Due to its high voltage and high drain current characteristics, this MOSFET is suitable for the high power charging system in the electric vehicle charging pile, providing fast and stable charging effect.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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