Model: TN0200TS-T1-E3-VB.
Silk screen: VB1240.
Brand: VBsemi.
Parameters: .
- Channel type: N channel.
- Maximum withstand voltage: 20V.
- Maximum continuous current: 6A.
- Turn-on resistance (RDS(ON)): 24mΩ @ 4.5Vgs, 33mΩ @ 2.5Vgs.
- Threshold voltage (Vth): 0.45V to 1V possible Adjustment.
- Package type: SOT23.
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Application introduction: .
TN0200TS-T1-E3-VB is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), suitable for Used in a variety of electronic applications, it has low resistance and moderate voltage and current handling capabilities. The following are some of its main application areas: .
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1. Power management module: This MOSFET is suitable for low-power power management modules. It can be used in applications such as switching regulators, power adapters, and DC-DC converters, helping to provide high efficiency and stable power output. .
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2. Battery protection module: Due to its moderate current carrying capacity and low resistance, it can be used in battery protection modules to ensure the safety and performance of the battery during charging and discharging. .
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3. Signal switch: TN0200TS-T1-E3-VB can also be used for signal switch and circuit protection to control and manage signal paths, such as in communication equipment, audio amplifiers and control circuits. .
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4. Low-voltage circuits: Due to its low resistance and adjustable threshold voltage, this MOSFET is particularly suitable for use in low-voltage circuits, such as mobile devices, portable electronic devices and low-power applications. .
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In short, TN0200TS-T1-E3-VB is an N-channel MOSFET suitable for low-power electronic applications, especially suitable for power management, battery protection, signal switching and low-voltage circuits. It has a wide range of uses in small electronic devices and portable electronics. .