Model: TK35S04K3L-VB.
Silk screen: VBE1405.
Brand: VBsemi.
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Parameter description: .
- N channel.
- Rated voltage: 40V.
- Maximum current: 85A.
- Static on-resistance (RDS(ON)): 4mΩ@10V, 5mΩ@4.5V, 20Vgs(±V).
- Threshold voltage (Vth): 1.85V.
- Package type: TO252.
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Application introduction: .
TK35S04K3L-VB is a high-performance N-channel MOSFET transistor, suitable for a variety of high-voltage and high-current electronic equipment and Application areas. The following are some possible application areas: .
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1. Power module: TK35S04K3L-VB can be used in power modules to support high voltage and high current applications, suitable for power switches, DC-DC converters and Inverter design. .
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2. Motor control: This MOSFET is suitable for motor control circuits and can be used in drive systems for industrial motors, power tools and electric vehicles, supporting high current and high efficiency. .
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3. High-voltage DC-DC converter: Among high-voltage DC-DC converters, TK35S04K3L-VB can be used for voltage conversion and power management, suitable for communication equipment, electric vehicles and solar inverters device. .
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4. Battery management: This MOSFET can be used in battery management systems for battery charge and discharge control and protection. It is suitable for electric vehicles, solar energy storage systems and other fields. .
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5. High power electronics: TK35S04K3L-VB is also suitable for high power electronic applications such as power electronics, electric trains and power transmission and distribution. .
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6. Automotive electronics: In the field of automotive electronics, it can be used in electronic control units (ECUs), vehicle circuit protection and battery management systems to support the high voltage requirements of automotive electronics. .
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In summary, TK35S04K3L-VB is a versatile high-voltage N-channel MOSFET transistor suitable for a variety of high-power, high-current applications to provide excellent performance and reliability. It is particularly suitable for applications requiring high power switching and voltage control.