**Detailed parameter description:**.
- **Model:** TJ60S04M3L-VB.
- **Silk screen:** VBE2406.
- **Brand:** VBsemi.
- **Parameters:**.
- Package type: TO252.
- Channel type: P—Channel.
- Rated voltage (VDS): -40V.
- Rated current (ID ): -110A.
- On-resistance (RDS(ON)): 4.8mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): -2V.
.
**Application introduction:**.
This P-Channel channel MOSFET is suitable for high power and high voltage application scenarios, and is commonly used in the following fields:.
.
1. **Power switch module :** Due to its high current and voltage characteristics, it is suitable for high-power power switching modules, providing reliable high-voltage switching control. .
.
2. **Power Inverter:** Used for high-power power inverter to convert DC power to AC power, such as large inverters or UPS systems. .
.
3. **Motor control:** In the high-power motor drive and control module, it serves as a current switch to achieve precise control of the motor. .
.
4. **Electric vehicle charging piles:** Used to control current and achieve fast charging in electric vehicle charging piles that require high current and voltage. .
.
**Usage Notes:**.
1. **Package Type:** Make sure to select and handle the TO252 package correctly to ensure soldering quality and proper heat dissipation. .
.
2. **Voltage and current limits:** Do not exceed the rated voltage and current parameters to prevent device damage. .
.
3. **Thermal Design:** In high-power applications, effective thermal design is required to ensure that the device operates within the appropriate temperature range. .
.
4. **Threshold Voltage Note:** Understand and consider the threshold voltage to ensure appropriate voltage bias in actual applications. .
.
In any application, product manuals and specifications should be read carefully to ensure correct use and operation.