Model: SUD50N04-8M8P-4GE3-VB.
Silk screen: VBE1405.
Brand: VBsemi.
Parameter description: .
- MOSFET type: N channel.
- Rated voltage: 40V .
- Maximum current: 85A.
- On-resistance (RDS(ON)): 4mΩ @ 10V, 5mΩ @ 4.5V, 20Vgs.
- Threshold voltage (Vth): 1.85V.
- Package: TO252.
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Application Introduction: .
SUD50N04-8M8P-4GE3-VB is a high-performance N-channel MOSFET suitable for electronic equipment requiring high current and low on-resistance and in the circuit. It has a wide range of applications in some domain-specific modules. .
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**Application areas and module description:**.
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1. **Power module**:.
- Due to its low on-resistance and high current handling Capability, SUD50N04-8M8P-4GE3-VB is suitable for high power power modules. .
- Can be used in switching power supplies, DC-DC converters, server power supplies, electric vehicle charging piles and other fields to provide efficient power conversion. .
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2. **Motor Drive Module**: .
- The high current and low on-resistance of this MOSFET make it ideal for motor drive modules. .
- Used to improve the performance and efficiency of motors in the fields of power tools, electric vehicle motor control, industrial motor control, etc. .
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3. **Battery Management Module**: .
- SUD50N04-8M8P-4GE3-VB can be used for battery charge and discharge control in the battery management module. .
- Used in electric vehicles, solar inverters, industrial UPS and other fields to achieve safe and efficient management of high-power batteries. .
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4. **High Power Switch Module**: .
- This MOSFET is very useful in applications that require high power switching control, such as high power power switching, battery voltage regulation, etc. . .
- Helps achieve reliable and precise control of high power circuits. .
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5. **Electric Vehicle Charging Module**: .
- Due to its high current carrying capacity, SUD50N04-8M8P-4GE3-VB can be used in electric vehicle charging piles and charging control modules. .
- Helps achieve fast charging and battery management of electric vehicles. .
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In summary, SUD50N04-8M8P-4GE3-VB is a versatile N-channel MOSFET with a wide range of applications including power supply, motor drive, battery management, high-power switching and electric vehicle charging and other modules in multiple fields. Its low on-resistance, high current handling capability, and high-performance characteristics make it an important component of a variety of high-power electronic devices and systems, helping to improve efficiency and performance.