Model: SUD23N06-31-VB.
Silk screen: VBE1638.
Brand: VBsemi.
Parameters: TO252; N—Channel, 60V; 45A; RDS(ON)=24mΩ@VGS=10V, VGS=20V; Vth=1.8V; .
Package: TO252.
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**Detailed parameter description:**.
- **Model**: SUD23N06-31-VB.
- **Silk screen**: VBE1638.
- **Brand**: VBsemi.
- **Parameters**: .
- Package: TO252.
- Channel type: N-Channel.
- Rated voltage: 60V.
- Rated current: 45A.
- On-state resistance (RDS(ON)): 24mΩ @ VGS=10V, VGS=20V.
- Gate-source threshold voltage (Vth): 1.8V.
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**Application introduction:**.
SUD23N06-31-VB is an N-channel MOSFET with excellent performance, suitable for a variety of Electronic applications, especially in the following fields and corresponding modules: .
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1. **Power module:**.
Due to its higher rated voltage and current carrying capacity, SUD23N06- 31-VB is ideal for power modules, including DC power supplies and switching power supplies. .
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2. **Motor Drive Module:**.
The high current characteristics of this device make it an ideal choice as a motor drive module for a variety of motor control applications. .
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3. **Power Inverter:**.
is suitable for power inverter and can provide reliable performance under different voltage and frequency requirements. .
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4. **Power Management System:**.
Due to its low on-state resistance and high current capability, it is suitable for power management systems to ensure efficient power conversion and distribution. .
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**Usage Precautions:**.
- Please use voltage and current according to the maximum ratings in the product specification sheet. .
- Ensure use within specified operating temperature range to ensure performance and reliability. .
- Careful design of the thermal system ensures that the device maintains proper operating temperature under high load conditions. .
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Please note that the above suggestions are for reference only, and specific applications need to be adjusted according to project needs and design requirements.