Model: STN2NF10-VB.
Silkscreen: VBJ1101M.
Brand: VBsemi.
Parameters: SOT223; N-Channel, 100V; 5A; RDS(ON)=100mΩ@VGS=10V, VGS=20V; Vth=2~4V; .
Package: SOT223.
.
**Detailed parameter description:**.
- **Model**: STN2NF10-VB.
- **Silkscreen**: VBJ1101M.
- **Brand**: VBsemi.
- **Parameter**: .
- Package: SOT223.
- Channel type: N-Channel.
- Rated voltage: 100V.
- Rated current: 5A.
- On-state resistance (RDS(ON)): 100mΩ @ VGS=10V, VGS=20V.
- Gate-source threshold voltage (Vth): 2~4V.
.
**Application introduction:**.
STN2NF10-VB is a high-performance N-channel MOSFET suitable for a variety of electronic applications, especially in the following fields and corresponding modules:.
.
1. **Power switch module:**.
Due to its N-channel characteristics, it is suitable for power switch modules to achieve reliable power switch control. .
.
2. **Power inverter:**.
It has good performance in power inverters and can be used in solar inverters and other renewable energy systems. .
.
3. **LED lighting driver:**.
It is suitable for LED lighting systems to provide reliable power regulation and power control. .
.
4. **Power Management System:**.
Due to its low on-resistance and high current capability, it is suitable for power management systems to ensure efficient power conversion and distribution. .
.
**Notes on use:**.
- Please use voltage and current according to the maximum ratings in the product datasheet. .
- Ensure that it is used within the specified operating temperature range to ensure performance and reliability. .
- Pay attention to the range of gate-source threshold voltage and ensure that appropriate voltage drive is considered in the design. .
.
Please note that the above suggestions are for reference only and the specific application needs to be adjusted according to project needs and design requirements.