Model: STD30PF03LT4-VB.
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Silk screen: VBE2317.
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Brand: VBsemi.
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Parameter: .
- Package type: TO252.
- Channel type: P-Channel.
- Rated voltage: -30V.
- Maximum current: -40A.
- On-state resistance: RDS(ON) = 18mΩ @ VGS=10V, VGS= 20V.
- Threshold voltage: Vth = -1.7V.
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Package: TO252.
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**Detailed parameter description:**.
1. **Package Type (Package Type):** TO252, indicating that the device uses TO252 package. .
2. **Channel Type:** P-Channel, indicating that this is a P-channel MOSFET. .
3. **Rated Voltage:** -30V, indicating the maximum voltage at which the device can operate normally. Negative values indicate that the device is a P-channel MOSFET. .
4. **Maximum Current:** -40A, indicating the maximum current that the device can withstand. Negative values indicate that the direction of current flow is from source to drain. .
5. **On-State Resistance:** RDS(ON) = 18mΩ @ VGS=10V, VGS=20V, indicating the resistance in the open state under a specific gate-source voltage. .
6. **Threshold Voltage:** Vth = -1.7V, which represents the voltage required for the device to switch from the off state to the on state under the action of the gate-source voltage. .
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**Application Introduction:**.
STD30PF03LT4-VB is a P-Channel MOSFET, suitable for a variety of application fields, including but not limited to:.
1. ** Power Switches:** Due to its P-channel nature, it can be used in power switches and power inverters. .
2. **Motor Drive:** High-power drive circuit suitable for DC motors and stepper motors, providing efficient current control. .
3. **Power Inverter:** Used in solar inverters and other power inverters to provide efficient energy conversion. .
4. **Power management module:** Suitable for various power management applications, such as switching power supply, battery management, etc. .
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Please note that the data sheet and application manual of the device should be carefully referenced in specific designs to ensure correct use and performance.