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STB80NF10T4-VB, a N-channel TO263 MOSFET datasheet parameters video explanation
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**STB80NF10T4-VB detailed parameter description and application introduction: **.
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- **Parameters: **.
- Silk screen: VBL1101N.
- Brand: VBsemi.
- Package: TO263.
- Type: N—Channel.
- Rated voltage: 100V.
- Rated current: 100A.
- RDS(ON): 10mΩ @ VGS=10V, 20V.
- Threshold voltage: 3V.
.
- **Application introduction: **.
- STB80NF10T4-VB is an N-channel field effect transistor (MOSFET) suitable for high power switching and power control. .
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- **Application areas:**.
- High power switch module.
- Power control module.
.
- **Function:**.
- In high power switch module, it is used to control the conduction and cutoff of the circuit, suitable for high power equipment. .
- In power control module, it is used to achieve efficient switching and regulation of power supply, suitable for high power electronic equipment. .
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- **Precautions for use:**.
- Silk screen VBL1101N corresponds to STB80NF10T4-VB, ensure correct identification. .
- Use within the specified voltage and current range to prevent damage to the equipment. .
- Follow the circuit design and application recommendations provided by the manufacturer.

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