Model: ST3422AS23RG-VB.
Silk screen: VBB1630.
Brand: VBsemi.
Parameters:.
- N channel.
- Rated voltage: 60V.
- Maximum leakage current : 5.5A.
- Static drain-source resistance (RDS(ON)): 30mΩ @ 10V, 36mΩ @ 4.5V, 20Vgs.
- Threshold voltage (Vth) range: 1V to 3V.
- Package: SOT23-3L.
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Application Profile: .
ST3422AS23RG-VB is an N-channel field effect transistor suitable for low and medium power electronic applications with low on-resistance and Medium rated voltage. The following are some possible application areas and modules: .
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1. **Power Switch**: This N-channel MOSFET is suitable for low-power power switching modules such as power switching circuits, voltage regulators and Power Adapter. Its ability to effectively control current and voltage makes it suitable for low-power power management applications. .
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2. **Signal switch**: ST3422AS23RG-VB can be used for signal switching applications, such as analog signal switching, digital signal switching and signal amplifier. .
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3. **Power Switching and Control**: In various low-power electronic switching and control applications, this MOSFET can be used in power switches, circuit controls and power adapters. .
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4. **Current adjustment module**: It can also be used in low-power current adjustment modules, such as LED drivers, current adjustment circuits and power management units to ensure the stability and accuracy of circuit output sex. .
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5. **Low Power Electronic Switch**: It is widely used in various low power electronic switching applications, including low power electronic switching, low power circuit protection and low power signal switching. .
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In short, ST3422AS23RG-VB N-channel MOSFET is suitable for a variety of low-power and medium-power electronic applications, including power management, signal switching, current regulation, electronic switching and circuit control. It helps achieve high efficiency and reliability in low-power electronic systems and is especially suitable for low-power power management and signal control.