Model: SSM3J36FS-VB.
Silk screen: VBTA2245N.
Brand: VBsemi.
Parameters:.
- Package type: SC75-3.
- Channel type: P—Channel.
- Maximum drain voltage (Vds): -20V.
- Maximum drain current (Id): -0.4A.
- Static drain-source resistance (RDS(ON)): 450mΩ @ VGS=4.5V, VGS=12V.
- Threshold voltage (Vth): -0.45V.
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Package: SC75-3.
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Application Introduction:.
SSM3J36FS-VB is a P-Channel trench MOSFET suitable for a variety of circuit and module designs, especially in low power consumption and miniaturization applications that require P-Channel MOSFET. .
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Field Module Application: .
1. **Power Management Module:** Suitable for power management circuits such as low-power switching power supplies, portable power supplies, etc. to achieve efficient power conversion and energy management. .
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2. **Battery Protection Module:** Used in battery charge and discharge management circuits to provide efficient battery management and protection functions. .
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3. **Signal Switch Module:** In some circuit designs that require analog switch functions, such as signal switches, analog switching power supplies, etc. .
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4. **Miniaturized Devices:** Due to its small package and low power consumption, it is suitable for miniaturized device designs such as portable electronic devices, sensor nodes, etc. .
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5. **Analog Circuits:** In some analog circuits that require P-Channel MOSFETs, SSM3J36FS-VB can be used to achieve high-performance analog signal processing. .
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Please note that the above are some typical application scenarios. When actually using, it is necessary to select and design according to the specific circuit and system requirements. When integrating SSM3J36FS-VB, it is recommended to read its data sheet carefully to obtain detailed electrical characteristics and operation information.