**VBsemi SPP80P06P-H-VB**.
.
**Detailed parameter description:**.
- Type: P-Channel MOSFET.
- Rated voltage (VDS): -60V.
- Maximum current (ID): -50A.
- On-resistance (RDS(ON)): 19mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): -1.96V.
- Package: TO220.
.
**Application Introduction:**.
This device is suitable for high power, medium current applications, especially in the following field modules:.
.
1. **Power module:**.
- Used in high power power modules to provide efficient energy conversion. .
.
2. **Motor drive:**.
- In motor control modules, used for high-power motor drive. .
.
3. **Power inverter:**.
- Suitable for large inverters, such as industrial-grade inverters. .
.
**Application areas:**.
- Industrial electronics.
- High-power power supply systems.
- High-power motor control.
.
**Function:**.
- Provide high current carrying capacity.
- Reduce power loss.
- Achieve efficient energy conversion in high-power systems.
.
**Precautions for use:**.
1. Please operate according to the recommended operating conditions in the data sheet. .
2. Pay attention to the specific value of the threshold voltage and make sure to consider this parameter in the design. .
3. Ensure that the heat dissipation design is sufficient to prevent overheating. .
4. Consider current and voltage limits in design to avoid device damage.