Model: SI7884BDP-T1-GE3-VB.
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Screen printing: VBQA1405.
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Brand: VBsemi.
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Package: DFN8(5X6).
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**Detailed parameter description:**.
- **Channel Type:** N—Channel.
- **Maximum Drain Current:** 75A .
- **Maximum Drain-Source Voltage:** 40V.
- **On-Resistance:** RDS(ON)=4.7mΩ @ VGS=10V , VGS=20V.
- **Threshold Voltage (Gate Threshold Voltage):** Vth=1.9V.
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**Application Introduction:**.
SI7884BDP-T1-GE3- VB is an N-Channel field effect transistor with excellent properties such as high leakage current, low leakage voltage, and low on-resistance. It adopts DFN8 (5X6) standard package and is suitable for a variety of electronic applications. .
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**Main application field modules:**.
1. **Power switch module:** Due to the N-Channel structure of SI7884BDP-T1-GE3-VB, it is suitable for power switch modules , achieving efficient power control and management. .
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2. **Motor drive module:** Due to its high leakage current and low on-resistance, it can be used in motor drive modules to ensure efficient performance when the motor is running. .
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3. **Power Inverter Module:** Suitable for power inverter module, used to convert DC power to AC power, such as for solar inverters. .
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4. **High current load switch module:** Due to the maximum leakage current of 75A, it can be used in high current load switch modules, such as power switch circuits, high-power LED drivers, etc. .
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**Precautions for use:**.
- Please use it in accordance with the specifications and application guide provided by the manufacturer, and ensure that the working conditions are within the specified range of the component. .
- Make sure the circuit design is reasonable to prevent overcurrent, overvoltage, etc. from causing damage to the device. .
- Pay attention to proper thermal design, especially in high power applications, to ensure that the device is within the normal operating temperature range. .
- Follow relevant standards for soldering and packaging to ensure reliable connection between the device and the circuit board. .
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The above are general suggestions. Specific use should be considered in detail based on the actual situation and application requirements.