Model: SI7850DP-T1-E3-VB.
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Silk screen: VBQA1638.
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Brand: VBsemi.
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Parameters:.
- Package type: DFN8(5X6).
- Channel type: N-Channel.
- Rated voltage: 60V.
- Maximum current: 45A.
- On-resistance: RDS(ON) = 24mΩ @ VGS=10V, VGS=20V.
- Threshold voltage: Vth = 1~3V.
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Package: DFN8(5X6).
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**Detailed parameter description:**.
1. **Package Type:** DFN8(5X6), indicating that the device uses DFN8(5X6) package, with a size of 5mm x 6mm. .
2. **Channel Type:** N-Channel, indicating that this is an N-channel MOSFET. .
3. **Rated Voltage:** 60V, indicating the maximum voltage at which the device can work normally. .
4. **Maximum Current:** 45A, indicating the maximum current that the device can withstand. .
5. **On-State Resistance:** RDS(ON) = 24mΩ @ VGS=10V, VGS=20V, indicating the resistance in the on state under a specific gate-source voltage. .
6. **Threshold Voltage:** Vth = 1~3V, indicating the voltage range required for the device to switch from the off state to the on state under the action of the gate-source voltage. .
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**Application Introduction:**.
SI7850DP-T1-E3-VB is an N-Channel MOSFET suitable for a variety of applications, including but not limited to:.
1. **Power Switch:** Due to its N-channel nature, it can be used for power switches and power inverters. .
2. **Motor Drive:** Suitable for high-power drive circuits of DC motors and stepper motors, providing efficient current control. .
3. **Power Inverter:** Used in solar inverters and other power inverters to provide efficient energy conversion. .
4. **Power Management Module:** Suitable for a variety of high-power power management applications, such as server power supplies, power tools, etc. .
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Please note that the data sheet and application manual of the device should be carefully referred to in the specific design to ensure correct use and performance.