Model: SI4850DY-T1-E3-VB.
Silkscreen: VBA1630.
Brand: VBsemi.
Parameters:.
- N-channel.
- Maximum withstand voltage: 60V.
- Maximum current: 7.6A.
- Static on-resistance: 27mΩ @ 10V, 32mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage: 1.54V.
- Package: SOP8.

**Detailed parameter description:**.
SI4850DY-T1-E3-VB is an N-channel MOSFET with a maximum withstand voltage of 60V and a maximum current of 7.6A. Under different voltages, its static on-resistance is as follows: 27mΩ at 10V, 32mΩ at 4.5V, and the driving voltage range is ±20V. The threshold voltage is 1.54V. The device is packaged in SOP8. .
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**Application Introduction:**.
SI4850DY-T1-E3-VB is suitable for modules in a variety of fields, including but not limited to: .
1. **Power Management Module**: Due to its low on-resistance and high withstand voltage characteristics, it can be used for power switches to effectively manage and control current and reduce power consumption. .
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2. **Drive Circuit**: As an N-channel MOSFET, it can be used for drive circuits including motor drives, lighting controls, and electronic switches. .
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3. **Battery Management**: In charge and discharge management circuits, it can be used for battery protection and current control. .
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4. **Communication Equipment**: In the power switch and power inverter of communication equipment, the device can achieve efficient power conversion. .
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In short, SI4850DY-T1-E3-VB is suitable for various electronic fields that require high-performance N-channel MOSFETs, from power management to electronic switches and communication equipment.